EPITAXIAL NISI2 FILMS ON SI(100)

Authors
TEICHERT S BRETSCHNEIDER W HELMS H BEDDIES G FRANKE T LANGE C
Citation
S. Teichert et al., EPITAXIAL NISI2 FILMS ON SI(100), Thin solid films, 229(2), 1993, pp. 137-139
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
229
Issue
2
Year of publication
1993
Pages
137 - 139
Database
ISI
SICI code
0040-6090(1993)229:2<137:ENFOS>2.0.ZU;2-B
Abstract
Epitaxial thin NiSi2 layers can be produced by using the template meth od under conventional high vacuum conditions in a triode sputtering sy stem. Structure investigations by X-ray diffraction, REM and Rutherfor d backscattering spectroscopy are described.