Indium-doped zinc oxide thin films were grown using the chemical spray
deposition technique and different doping compounds in the starting s
olution. In particular, indium chloride, indium sulfate and indium ace
tate were used as indium sources. The films show a high degree of pref
erential crystalline orientation which depends mainly on the type of d
oping compound and the substrate temperature. The lowest value of the
resistivity is 2 x 10(-3) OMEGA cm and the transmittance is on average
higher than 90%. It was found that the texture of the films could be
changed quite easily making it possible to grow films for different ap
plications.