Amc. Perezmartin et al., CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION, Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 281-284
Stoichiometric iron carbide layers have been fabricated using a t-o-st
ep implantation process. First, carbon preimplantation at 400 keV is p
erformed at low substrate temperature (approximately 50-degrees-C) to
form a region with high carbon concentration. For a pre-implantation d
ose of 7.5 x 10(17) cm-2, annealing at 300-degrees-C results in format
ion of stoichiometric Fe3C (cementite) at the position of the pre-impl
anted atoms. When the pre-implanted specimen is implanted with 850 keV
C+ at 300-degrees-C the Fe3C layer grows by diffusion of implanted at
oms through the iron substrate to the cementite layer. When a 400 keV
carbon pre-implant is followed by implantation of 1 MeV nitrogen at 30
0-degrees-C, gamma'-Fe4N nucleates and grows on the carbide layer.