THE ELECTRONIC EFFECT OF TI4-PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS - APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES(, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL)

Authors
CAMPET G HAN SD WEN SJ MANAUD JP PORTIER J XU Y SALARDENNE J
Citation
G. Campet et al., THE ELECTRONIC EFFECT OF TI4-PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS - APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES(, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL), Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 285-289
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
19
Issue
3
Year of publication
1993
Pages
285 - 289
Database
ISI
SICI code
0921-5107(1993)19:3<285:TEEOTO>2.0.ZU;2-U
Abstract
The electronic properties of In2O3 (IO) and Sn-doped In2O3 (ITO) ceram ics doped with Ti4+, Zr4+ or Ge4+ are investigated. The choice of the doping elements arises from their high value of the ''Lewis acid stren gth''. Related to that, it has been shown that the doping of IO or ITO ceramics with Zr4+, and most interestingly with Ti4+ or Ge4+, increas es both the carrier concentration and the mobility. This approach has been successfully applied to thin films, and new highly-transparent co nductive electrodes have been realized.