DISLOCATION-POINT DEFECTS INTERACTION IN SEMICONDUCTORS AND KINK MOBILITY

Authors
NIKITENKO VI FARBER BY IUNIN YL ORLOV VI
Citation
Vi. Nikitenko et al., DISLOCATION-POINT DEFECTS INTERACTION IN SEMICONDUCTORS AND KINK MOBILITY, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 164(1-2), 1993, pp. 346-349
Citations number
13
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
164
Issue
1-2
Year of publication
1993
Pages
346 - 349
Database
ISI
SICI code
0921-5093(1993)164:1-2<346:DDIISA>2.0.ZU;2-J
Abstract
The results are presented of an experimental study of the mobility of individual dislocations in silicon single crystals under a periodic tw o-level loading. The loadings have been employed to study a mean dista nce covered by dislocations as a function of load pulse duration and i ntervals between them at different shear stress levels. A description of the experimental data obtained for the kink migration in the field of random force has been examined. The qualitative agreement of the ex perimental data with calculations is shown.