1.0-MA-THRESHOLD UNCOATED LASERS BY IMPURITY-INDUCED DISORDERING

Authors
ZOU WX BOWEN T LAW KK YOUNG DB MERZ JL
Citation
Wx. Zou et al., 1.0-MA-THRESHOLD UNCOATED LASERS BY IMPURITY-INDUCED DISORDERING, IEEE photonics technology letters, 5(6), 1993, pp. 591-594
Citations number
14
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
6
Year of publication
1993
Pages
591 - 594
Database
ISI
SICI code
1041-1135(1993)5:6<591:1ULBID>2.0.ZU;2-0
Abstract
Low-threshold lasers have been fabricated by impurity-induced disorder ing using InGaAs/GaAs/AlGaAs double-quantum-well material. Threshold c urrent as low as 1.0 mA under room-temperature continuous-wave operati on was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the QW desig n and the device structures.