HIGH-POWER 2.0-MU-M INGAASP LASER-DIODES

Data are presented on strained-layer InGaAs/InGaAsP double-quantum-wel l laser diodes operating at 2.0 mum. The total external efficiency and maximum power achieved is 55% and 1.6 W CW, respectively, from a 200 mum gain-guided laser diode. Measurements on gain-guided broad area de vices yield an internal efficiency of 0.73 with a distributed loss coe fficient, alpha, of 7.5 cm-1. The measured threshold current density i s 300 A/cm 2 for a 2 mm long broad area device operated continuous-wav e at 25-degrees-C.