A HIGH-EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING SWITCHING LASER FABRICATED WITH POSTGROWTH CAVITY MODE POSITIONING

Authors
EVALDSSON PA TAYLOR GW COOKE PW SARGOOD SK KIELY PA DOCTER DP
Citation
Pa. Evaldsson et al., A HIGH-EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING SWITCHING LASER FABRICATED WITH POSTGROWTH CAVITY MODE POSITIONING, IEEE photonics technology letters, 5(6), 1993, pp. 634-636
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
6
Year of publication
1993
Pages
634 - 636
Database
ISI
SICI code
1041-1135(1993)5:6<634:AHVSSL>2.0.ZU;2-N
Abstract
We report on the first room temperature continuous wave operation of t he double heterostructure optoelectronic switching laser implemented a s a vertical-cavity laser. A deposited dielectric top reflector of SiO 2/TiO2 allowed the use of a cavity etch back technique after the sampl e was grown to position the cavity mode at the desired wavelength. Roo m temperature CW threshold currents as low as 4.8 mA for a 14 mum diam eter device was obtained with slope efficiencies of 0.45 mW/mA. The ma ximum CW output power was 2.5 mW and the resistivity was 4 x 10(-4) OM EGAcm2.