REDUCTION OF DAMPING IN HIGH-SPEED SEMICONDUCTOR-LASERS

We derive an analytical expression for the intrinsic gain suppression factor based on carrier heating. The theory shows good agreement with the published experimental value of epsilon = + 1.5 x 10(-17) cm3 for in-plane lasers. For the first time, we predict and experimentally obs erve a negative gain suppression factor for particular laser designs. A negative gain suppression factor can lead to the elimination of damp ing in semiconductor lasers. Using vertical-cavity surface-emitting la sers, we observe a negative gain suppression factor of -2.2 x 10(-17) cm3.