Sl. Daryanani et al., THE INVERSION CHANNEL RESONANT-CAVITY ENHANCED PHOTODETECTOR FOR 2-DIMENSIONAL OPTOELECTRONIC ARRAY APPLICATIONS, IEEE photonics technology letters, 5(6), 1993, pp. 677-679
The operation of the inversion-channel resonant-cavity enhanced (RCE)
photodetector is demonstrated in a configuration compatible with the v
ertical-cavity surface-emitting laser (VCSEL). The phototransistor use
d three strained InGaAs/GaAs quantum wells as the absorbing region and
a post-growth dielectric top stack. A quantum efficiency of 41% was o
btained at the resonant wavelength of 0.94 mum, thereby giving a reson
ant-enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a
current density of 10 A / cm2 allowed the phototransistor responsivity
to reach 2.1 A / W at the resonant wavelength.