THE INVERSION CHANNEL RESONANT-CAVITY ENHANCED PHOTODETECTOR FOR 2-DIMENSIONAL OPTOELECTRONIC ARRAY APPLICATIONS

Authors
DARYANANI SL TAYLOR GW SARGOOD SK VANG T TELL B
Citation
Sl. Daryanani et al., THE INVERSION CHANNEL RESONANT-CAVITY ENHANCED PHOTODETECTOR FOR 2-DIMENSIONAL OPTOELECTRONIC ARRAY APPLICATIONS, IEEE photonics technology letters, 5(6), 1993, pp. 677-679
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
6
Year of publication
1993
Pages
677 - 679
Database
ISI
SICI code
1041-1135(1993)5:6<677:TICREP>2.0.ZU;2-A
Abstract
The operation of the inversion-channel resonant-cavity enhanced (RCE) photodetector is demonstrated in a configuration compatible with the v ertical-cavity surface-emitting laser (VCSEL). The phototransistor use d three strained InGaAs/GaAs quantum wells as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was o btained at the resonant wavelength of 0.94 mum, thereby giving a reson ant-enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A / cm2 allowed the phototransistor responsivity to reach 2.1 A / W at the resonant wavelength.