E. Shibano et al., LIQUID-PHASE EPITAXY OF ALGAINP ON GAAS SUBSTRATE USING ALGAAS BUFFERLAYER, Crystal research and technology, 28(4), 1993, pp. 469-477
Liquid phase epitaxial layers of AlGaInP were successfully grown on Al
0.9Ga0.1As buffer layer with varying aluminum melt composition. Epitax
ial layers were characterised by using a scanning elelctron microscope
, X-ray diffraction, photoluminescence (PL) and Auger depth profile me
asurements. The shortest peak wavelength of PL spectra obtained in the
samples was 630 nm at room temperature. It was found that the thickne
ss of the AlGaInP layer is very small due to rapid change of aluminum
in the melt composition.