LIQUID-PHASE EPITAXY OF ALGAINP ON GAAS SUBSTRATE USING ALGAAS BUFFERLAYER

Authors
SHIBANO E FUJIWARA S KOHNO K TAKAHASHI NS KURITA S
Citation
E. Shibano et al., LIQUID-PHASE EPITAXY OF ALGAINP ON GAAS SUBSTRATE USING ALGAAS BUFFERLAYER, Crystal research and technology, 28(4), 1993, pp. 469-477
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
28
Issue
4
Year of publication
1993
Pages
469 - 477
Database
ISI
SICI code
0232-1300(1993)28:4<469:LEOAOG>2.0.ZU;2-J
Abstract
Liquid phase epitaxial layers of AlGaInP were successfully grown on Al 0.9Ga0.1As buffer layer with varying aluminum melt composition. Epitax ial layers were characterised by using a scanning elelctron microscope , X-ray diffraction, photoluminescence (PL) and Auger depth profile me asurements. The shortest peak wavelength of PL spectra obtained in the samples was 630 nm at room temperature. It was found that the thickne ss of the AlGaInP layer is very small due to rapid change of aluminum in the melt composition.