THERMOELECTRIC BEHAVIOR OF SOME PHASES IN THE IN-SE SYSTEM

Authors
NASSARY MM HUSSEIN SA NAGAT AT
Citation
Mm. Nassary et al., THERMOELECTRIC BEHAVIOR OF SOME PHASES IN THE IN-SE SYSTEM, Crystal research and technology, 28(4), 1993, pp. 561-566
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
28
Issue
4
Year of publication
1993
Pages
561 - 566
Database
ISI
SICI code
0232-1300(1993)28:4<561:TBOSPI>2.0.ZU;2-3
Abstract
The differential e.m.f. of In6Se7 single crystals as a function of tem perature have been measured. The electron to hole mobility ratio is de termined to be mu(n)/mu(p) = 3.62. The effective masses of electrons a nd holes are 4.21 x 10(-33) kg and 9.01 x 10(-29) kg, respectively. Th e diffusion coefficient for holes and electrons as well as the diffusi on length of free charge carriers have been determined.