ELECTRON-BEAM IRRADIATION TECHNOLOGY FOR DECREASING THE HFE VALUE OF TRANSISTOR

Authors
WANG ZY CHEN ZL LIU YJ ZHANG YH CHEN ZL SHI JQ FU JX YIN NY
Citation
Zy. Wang et al., ELECTRON-BEAM IRRADIATION TECHNOLOGY FOR DECREASING THE HFE VALUE OF TRANSISTOR, Radiation physics and chemistry, 42(4-6), 1993, pp. 1035-1038
Citations number
2
Categorie Soggetti
Nuclear Sciences & Tecnology","Chemistry Physical","Physics, Atomic, Molecular & Chemical
Journal title
Radiation physics and chemistry → ACNP
ISSN journal
0969806X
Volume
42
Issue
4-6
Year of publication
1993
Pages
1035 - 1038
Database
ISI
SICI code
0969-806X(1993)42:4-6<1035:EITFDT>2.0.ZU;2-I
Abstract
The relationships between the hFE value of transistor and the electron flux , beam current, annealing temperature and annealing time etc. ar e studied in this paper. The study shows, the hFE value of tranistor c an be decreased efficiently by electron beam irradiation and can be st abilized by annealing treatment.