QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY

Authors
BAUER A CUBERES MT PRIETSCH M KAINDL G
Citation
A. Bauer et al., QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 71(1), 1993, pp. 149-152
Citations number
21
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
1
Year of publication
1993
Pages
149 - 152
Database
ISI
SICI code
0031-9007(1993)71:1<149:QSOEIB>2.0.ZU;2-3
Abstract
Ballistic-electron-emission microscopy (BEEM) of Au and Mg films on n- type GaP(110), with thicknesses as low as 12 angstrom, reveals strong variations of spectral shape and magnitude of the BEEM current with me tal-film thickness and surface gradient. Using Monte Carlo simulations , the hot-electron transport between tip and semiconductor can be quan titatively described, providing detailed information on tunneling, tra nsport in the metal, transmission across the interface, and impact ion ization in the semi-conductor.