WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES

Authors
ITOH Y TAKAGI T MASUNO H KOHNO M HASHIMOTO T
Citation
Y. Itoh et al., WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES, IEICE transactions on electronics, E76C(6), 1993, pp. 938-943
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E76C
Issue
6
Year of publication
1993
Pages
938 - 943
Database
ISI
SICI code
0916-8524(1993)E76C:6<938:WHADUN>2.0.ZU;2-#
Abstract
A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of thi s design is in that it can provide wide bandwidth and high gain of hig h power amplifiers. Furthermore, the lower cutoff frequency and bandwi dth can be varied independently. With the use of this design, a Ku-ban d two-stage high power amplifier having a bandwidth of 18% has achieve d a linear gain of 9.75 +/- 1.75 dB, a saturated output power of great er than 37 dBm, and a power-added efficiency of greater than 10.4%.