ELECTRON G-FACTOR ANISOTROPY IN ASYMMETRIC GAAS ALGAAS QUANTUM-WELL

It is shown that in an asymmetric quantum well, grown in the direction z parallel-to [001] from semiconductors with a zinc blende structure, the conduction-band spin splitting attributable to the absence of an inversion center results in conduction-electron g-factor anisotropy in the plane of the well. It is demonstrated for the example of a GaAs/A lGaAs quantum well that the off-diagonal components g(xy)=g(yx) (x par allel-to [100]), which characterize the electron g-factor anisotropy i n the plane of the well, can be comparable in magnitude to the diagona l components g(xx) = g(yy).