A NOVEL ELECTRONIC-STATE IN (BEDT-TTF)2XHG(SCN)4 - X=K, NH4

Citation
T. Kouno et al., A NOVEL ELECTRONIC-STATE IN (BEDT-TTF)2XHG(SCN)4 - X=K, NH4, Synthetic metals, 56(1), 1993, pp. 2425-2430
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
ISSN journal
03796779
Volume
56
Issue
1
Year of publication
1993
Pages
2425 - 2430
Database
ISI
SICI code
0379-6779(1993)56:1<2425:ANEI(->2.0.ZU;2-X
Abstract
Magnetotransport measurements are made in the title compounds under hi gh pressures. An anomalous state is found in the low-temperature-low-f ield-low-pressure regime in the K-compound while the NH4-one behaves a s expected from the current model for quasi two-dimensional electronic systems. The anomalies are found in the so-called angle-dependent osc illation of magnetoresistance and the field and temperature dependence of the resistance. A phase diagram for the K-compound is made experim entally and electronic structures are discussed in relation to the pos sible spin-density wave found already in the anomalous state.