Rh. Magruder et al., FORMATION OF PHOTOSENSITIVE MATERIALS BY ION-IMPLANTATION OF OXYGEN IONS IN SILICA, Journal of non-crystalline solids, 159(3), 1993, pp. 269-273
Oxygen ions were implanted at 5 MeV in high purity silica to a dose of
3 x 10(16) ions/cm2. Samples were subsequently exposed to a series of
5 eV KrF excimer laser irradiations. Optical absorption and infrared
reflectance spectra were measured before and after each series of irra
diations. This material exhibits a photobleaching behavior that may be
useful for planar waveguide devices.