Mj. Zhou et al., A 2-D BOUNDARY-ELEMENT METHOD APPROACH TO THE SIMULATION OF DMOS TRANSISTORS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 810-816
A boundary element method is introduced for the calculation of two-dim
ensional potential and electric field distributions in high-voltage DM
OS transistors. A new algorithm is proposed to determine the dimension
s of the depletion layers in two-dimensional geometries. Regions with
different permittivities are taken into account using appropriate boun
dary conditions. As an application, the high-voltage behavior of the D
MOST's is investigated, and the avalanche breakdown conditions of the
transistors are determined by calculating the ionization integral. The
results are compared with simulations based on finite difference meth
ods.