A 2-D BOUNDARY-ELEMENT METHOD APPROACH TO THE SIMULATION OF DMOS TRANSISTORS

A boundary element method is introduced for the calculation of two-dim ensional potential and electric field distributions in high-voltage DM OS transistors. A new algorithm is proposed to determine the dimension s of the depletion layers in two-dimensional geometries. Regions with different permittivities are taken into account using appropriate boun dary conditions. As an application, the high-voltage behavior of the D MOST's is investigated, and the avalanche breakdown conditions of the transistors are determined by calculating the ionization integral. The results are compared with simulations based on finite difference meth ods.