Lp. Huang et Re. Bryant, INTRACTABILITY IN LINEAR SWITCH-LEVEL SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 829-836
The linear switch-level model represents a MOS transistor as a voltage
-controlled linear resistor and a storage node as a grounded, linear c
apacitor. For logic simulation, the linear switch-level model offers a
n attractive trade-off between resolution/accuracy and computational c
omplexity over gate level and circuit-level models. However, analysis
of MOS networks using the linear switch-level model becomes increasing
ly difficult in the presence of unknown values, such as logic X, and h
euristic methods are often employed. This paper shows the complexity o
f computing maximum and minimum steady-state voltages of a general MOS
network using the linear switch-level model in the presence of unknow
n values to be NP-complete. These results partially justify the use of
heuristic methods when unknown values are present.