INTRACTABILITY IN LINEAR SWITCH-LEVEL SIMULATION

Citation
Lp. Huang et Re. Bryant, INTRACTABILITY IN LINEAR SWITCH-LEVEL SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 829-836
Citations number
24
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Applications & Cybernetics
ISSN journal
02780070
Volume
12
Issue
6
Year of publication
1993
Pages
829 - 836
Database
ISI
SICI code
0278-0070(1993)12:6<829:IILSS>2.0.ZU;2-Q
Abstract
The linear switch-level model represents a MOS transistor as a voltage -controlled linear resistor and a storage node as a grounded, linear c apacitor. For logic simulation, the linear switch-level model offers a n attractive trade-off between resolution/accuracy and computational c omplexity over gate level and circuit-level models. However, analysis of MOS networks using the linear switch-level model becomes increasing ly difficult in the presence of unknown values, such as logic X, and h euristic methods are often employed. This paper shows the complexity o f computing maximum and minimum steady-state voltages of a general MOS network using the linear switch-level model in the presence of unknow n values to be NP-complete. These results partially justify the use of heuristic methods when unknown values are present.