ANALYSIS OF THE STABILITY OF MULTIPLE-PHASE-SHIFT DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS

Citation
Y. Champagne et N. Mccarthy, ANALYSIS OF THE STABILITY OF MULTIPLE-PHASE-SHIFT DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS, Canadian journal of physics, 71(1-2), 1993, pp. 29-38
Citations number
54
Categorie Soggetti
Physics
Journal title
ISSN journal
00084204
Volume
71
Issue
1-2
Year of publication
1993
Pages
29 - 38
Database
ISI
SICI code
0008-4204(1993)71:1-2<29:AOTSOM>2.0.ZU;2-6
Abstract
The effects of the longitudinal spatial hole burning on the static las ing characteristics of a specific configuration of distributed-feedbac k semiconductor laser with three phase-shift regions are investigated using a numerical approach. A serious degradation of the stability of the optimum design, having the flattest axial intensity distribution a t low output power, is predicted for drive levels beyond a critical va lue. The lasing wavelength exhibits a sudden shift (wavelength chirpin g), along with a significant degradation of the single-mode character of the longitudinal-mode spectrum. Thus, the potentialities of this mu ltiple-phase-shift structure to provide a stable narrow-linewidth emis sion at high output power appear to be less than expected from results calculated for the near-threshold regime. Nevertheless, it is found t hat a multiple-phase-shift configuration that departs slightly from th e optimum case suffices to recover most of the promises expected from this distributed-feedback laser design.