ANALYSIS OF THE GROWTH-PROCESS OF A-C-H LAYERS

The deposition of a-C:H layers in a d.c. ion plating system using diff erent organic precursors (toluene, n-hexane, cyclohexane and acetone) was investigated. The ion influx towards the substrate was characteriz ed by quadrupole mass spectroscopy and measurement of the ion current density. From the growth rate and mass density as well as the characte ristics of the ion flux the relative contributions of ions and neutral particles to the mass deposition were determined. The layer compositi on and structure were investigated using nuclear reaction analysis, pr ecision electron diffraction and Raman spectroscopy. Conclusions were drawn about the influence of the type of precursor on the growth proce ss and the layer structure.