The deposition of a-C:H layers in a d.c. ion plating system using diff
erent organic precursors (toluene, n-hexane, cyclohexane and acetone)
was investigated. The ion influx towards the substrate was characteriz
ed by quadrupole mass spectroscopy and measurement of the ion current
density. From the growth rate and mass density as well as the characte
ristics of the ion flux the relative contributions of ions and neutral
particles to the mass deposition were determined. The layer compositi
on and structure were investigated using nuclear reaction analysis, pr
ecision electron diffraction and Raman spectroscopy. Conclusions were
drawn about the influence of the type of precursor on the growth proce
ss and the layer structure.