DIRECT EVIDENCE FOR THE FORMATION OF A PASSIVATING LAYER DURING CHEMOMECHANICAL POLISHING OF SILICA BY A HYDROGEN DIFLUORIDE-BASED REAGENT

Authors
BOYLE DS CHUDEK JA HUNTER G JAMES D LITTLEWOOD MI MCGHEE L ROBERTSON MI WINFIELD JM
Citation
Ds. Boyle et al., DIRECT EVIDENCE FOR THE FORMATION OF A PASSIVATING LAYER DURING CHEMOMECHANICAL POLISHING OF SILICA BY A HYDROGEN DIFLUORIDE-BASED REAGENT, Journal of materials chemistry, 3(8), 1993, pp. 903-904
Citations number
13
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Journal of materials chemistry → ACNP
ISSN journal
09599428
Volume
3
Issue
8
Year of publication
1993
Pages
903 - 904
Database
ISI
SICI code
0959-9428(1993)3:8<903:DEFTFO>2.0.ZU;2-B
Abstract
The sparingly soluble material (the passivating layer) formed during c hemomechanical polishing of silica wafers by [HF2]--cerium(IV) oxide-s ucrose mixtures at low pH has been identified as K2SiF6 coated with a thin silica layer.