EFFECT OF WATER-VAPOR ON THE GROWTH OF ALUMINUM-OXIDE FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Citation
Js. Kim et al., EFFECT OF WATER-VAPOR ON THE GROWTH OF ALUMINUM-OXIDE FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 230(2), 1993, pp. 156-159
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
230
Issue
2
Year of publication
1993
Pages
156 - 159
Database
ISI
SICI code
0040-6090(1993)230:2<156:EOWOTG>2.0.ZU;2-T
Abstract
Low pressure chemical vapor deposition of aluminum oxide films from al uminum acetylacetonate an water vapor has been investigated. Water vap or played an important role in the film growth kinetics, film purity, and the surface morphology of the grown films. High water vapor pressu res produced ligand-free pure Al2O3 films with a smooth surface even a t a substrate temperature of 230-degrees-C.