Js. Kim et al., EFFECT OF WATER-VAPOR ON THE GROWTH OF ALUMINUM-OXIDE FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 230(2), 1993, pp. 156-159
Low pressure chemical vapor deposition of aluminum oxide films from al
uminum acetylacetonate an water vapor has been investigated. Water vap
or played an important role in the film growth kinetics, film purity,
and the surface morphology of the grown films. High water vapor pressu
res produced ligand-free pure Al2O3 films with a smooth surface even a
t a substrate temperature of 230-degrees-C.