In the present study the linear defects in several synthetic quartz ha
ve been surveyed by X-rav topography using Lang method. The grown-in d
islocations produced by layers displacement around holes, precipitates
or inclusions are discussed. Each growth zone is described with their
own defects pattern and some correlations with the external morpholog
y of the crystal are stated. There are also pointed out the asymmetry
of the defects for every growth zone and the specific role in the grow
th mechanism of the s-growth zone. In the final part of the work there
are outlined the general and the specific conclusions.