HIGH-POWER SINGLE-MODE 2.0 MU-M LASER-DIODES

Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs InGaAs/InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and ex ternal efficiency achieved is 50 mW and 43%, respectively. The far-fie ld is measured to be 31-degrees by 46-degrees in the parallel and perp endicular directions, yielding an aspect ratio of 1.5 for the single-m ode laser diode. The optical output of the laser diode is a multi-long itudinal mode spectra spanning 1.98-2.00 mum at an output power of 50 mW CW. The characteristic temperature, T(o), of the laser diode is 48 K.