MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH

Authors
SLATER DB ENQUIST PM HUTCHBY JA REED FE MORRIS AS KOLBAS RM TREW RJ LUJAN AS SWART JW
Citation
Db. Slater et al., MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH, IEEE photonics technology letters, 5(7), 1993, pp. 791-794
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
7
Year of publication
1993
Pages
791 - 794
Database
ISI
SICI code
1041-1135(1993)5:7<791:MISLAH>2.0.ZU;2-8
Abstract
An AlGaAs/GaAs Npn HBT laser driver circuit and a pseudomorphic InGaAs /GaAs/AlGaAs graded index SQW laser have been laterally integrated to maintain surface planarity using selective OMVPE regrowth of the HBT. The self-aligned HBT's exhibit a dc current gain of 30 and an f(t) (f( max)) of 45 (60) GHz. The 980 nm lasers exhibit room temperature thres hold current densities as low as 420 (320) A/cm2 for CW (pulsed) opera tion. The cavities measuring 40 (7) x 500 mum2 and have less than 1 (2 ) of series resistance. SPICE simulations of the integrated driver ind icate operating speeds over 10 Gb/s are possible.