MICROSTRUCTURAL ANALYSIS AND MODELING OF RUO(2) THIN-FILM RESISTORS

The microstructural properties of RuO2 thin film resistors with differ ent temperature coefficients of resistance (TCRs) were analyzed using X-ray diffraction, scanning electron microscopy and Auger electron spe ctroscopy. A model based on microstructure of the films was developed to explain the experimental results, such as the negative, positive an d near-zero TCRs of the resistors. The grain size controlled the resis tivity of the resistors. However, the chemical composition of the film was more likely to control the TCR of the resistors. A layer-like str ucture was required to fabricate near-zero-TCR resistors. The modeling based on the electrical measurement of the resistors provided valuabl e guidance in designing and fabricating near-zero-TCR resistors.