MICROSCOPE OBSERVATION OF A SELF-STANDING FILM OF POROUS SILICON

Citation
N. Ookubo et al., MICROSCOPE OBSERVATION OF A SELF-STANDING FILM OF POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 324-327
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
20
Issue
3
Year of publication
1993
Pages
324 - 327
Database
ISI
SICI code
0921-5107(1993)20:3<324:MOOASF>2.0.ZU;2-H
Abstract
A self-standing film (SSF) of porous silicon electrochemically isolate d from the substrate has been observed under optical and electron micr oscopes. The SSF consists of two layers: the top layer, on the side fr om which anodization starts, cracks into cells exhibiting a fine porou s structure: the bottom layer, on the side of isolation, shows a unifo rm and coarse porous structure. Under the optical microscope the film is found to expand upon wetting with methanol and to shrink back when it is dried. The change in the surface area amounts to about 10%, whil e any change in the thickness is undetectable. This expansion-shrinkag e process can be repeated, but the film is occasionally cracked when i t shrinks.