AU AND AU-ZN CONTACTS ON P-GASB AND THE CHARACTERISTICS OF THE INTERFACES

We analyse the specific contact resistance rho(C) and the interfacial microstructural characteristics (by Auger electron spectroscopy and X- ray diffraction) of Au and AuZn contacts on p-GaSb. The experiments sh owed that rho(C) hardly depends on the inclusion of Zn in the metallic film or on the annealing processes, at least for the carrier concentr ations available (p greater-than-or-equal-to 1.6 x 10(17) cm-3). Howev er, the dependence of rho(C) on the acceptor concentration leads us to conclude that field emission is the principal conduction mechanism, T he efficacy of an Ar glow discharge in considerably reducing the oxide present at the GaSb substrate is demonstrated. We also show that rapi d thermal annealing produces much thinner interface-reacted layers tha n does the conventional (resistive) heat treatment.