COMPOSITIONAL ENERGY-GAP VARIATION OF QUATERNARY ALLOY SEMICONDUCTORS(A(1-X)B(X)C(1-Y)D(Y)) USING THE UNIVERSALIZED TB PARAMETERS

Authors
SHIM K MOH HJ
Citation
K. Shim et Hj. Moh, COMPOSITIONAL ENERGY-GAP VARIATION OF QUATERNARY ALLOY SEMICONDUCTORS(A(1-X)B(X)C(1-Y)D(Y)) USING THE UNIVERSALIZED TB PARAMETERS, Journal of the Korean Physical Society, 26(4), 1993, pp. 420-422
Citations number
21
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
26
Issue
4
Year of publication
1993
Pages
420 - 422
Database
ISI
SICI code
0374-4884(1993)26:4<420:CEVOQA>2.0.ZU;2-0
Abstract
The universalized TB parameters in quaternary alloy semiconductors are developed by appropriately considering the effects of lattice relaxat ion and composition disorder. The compositional energy gap variation o f the alloy semiconductor Ga1-xInxAs1-yPy is calculated using these un iversalized TB parameters, and good agreement is obtained between our calculated values and the experimental results.