ROOM-TEMPERATURE ZNSE ZNCDSE BISTABLE SELF-ELECTRO-OPTIC EFFECT DEVICE OPERATING AT 488 NM/

Citation
Sy. Wang et al., ROOM-TEMPERATURE ZNSE ZNCDSE BISTABLE SELF-ELECTRO-OPTIC EFFECT DEVICE OPERATING AT 488 NM/, Applied physics letters, 63(7), 1993, pp. 857-859
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
7
Year of publication
1993
Pages
857 - 859
Database
ISI
SICI code
0003-6951(1993)63:7<857:RZZBSE>2.0.ZU;2-9
Abstract
Optical bistability at room temperature has been observed for the firs t time in a II-VI semiconductor self-electro-optic effect device fabri cated by molecular beam epitaxy. The optical switch is based on a ZnSe /ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.