EVIDENCE FOR HYDROGEN ACCUMULATION AT STRAINED-LAYER HETEROJUNCTIONS

Authors
SOBIESIERSKI Z CLEGG JB
Citation
Z. Sobiesierski et Jb. Clegg, EVIDENCE FOR HYDROGEN ACCUMULATION AT STRAINED-LAYER HETEROJUNCTIONS, Applied physics letters, 63(7), 1993, pp. 926-928
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
7
Year of publication
1993
Pages
926 - 928
Database
ISI
SICI code
0003-6951(1993)63:7<926:EFHAAS>2.0.ZU;2-E
Abstract
The incorporation of hydrogen into strained InxGa1-xAs/GaAs quantum we lls results in the formation of shallow, H-related radiative states wh ich compete with, and quench, the intrinsic band-to-band luminescence. By comparing the photoluminescence data obtained from hydrogenated ma terial with secondary ion mass spectroscopy profiles from deuterated m aterial, it is possible to deduce that the H-related radiative states are associated with H which is accumulated at the well interfaces.