HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES

Schottky diodes formed of Al, Au, and Hg on diamond have been characte rized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H-2, or O2 result in high surface leakage, while pla smas formed from N2 Or from CF4 with 8.5% O2 result in total leakage < 1000 e/s. Annealing the diamond at 660-degrees-C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsu rface layer that often occurs in diamond during normal processing.