Kz. Troost, ASSESSMENT OF IMPLANTATION DAMAGE BY BACKSCATTER KIKUCHI DIFFRACTION IN THE SCANNING ELECTRON-MICROSCOPE, Applied physics letters, 63(7), 1993, pp. 958-960
Surface damage caused by ion implantation is assessed by backscatter K
ikuchi diffraction in the scanning electron microscope. Backscatter Ki
kuchi diffraction patterns from Si(100) specimens implanted with diffe
rent doses of 80-keV Ge ions between 3 X 10(12) and 3 X 10(14) ions cm
-2 are obtained. The pattern contrast is quantified in a straightforwa
rd procedure employing standard image-processing operations. A compari
son between the contrast in backscattering Kikuchi diffraction pattern
s and the channeling minimum in energy spectra by Rutherford backscatt
ering spectrometry as a measure for surface implantation damage is mad
e. As it turns out, both measures are about equally sensitive to the l
evel of the surface implantation damage. The lateral resolution (< 100
nm) and the high surface sensitivity (of the order of 10 nm) of backs
catter Kikuchi diffraction may be exploited to study lateral implantat
ion profiles with sub-mum resolution.