TRANSPORT-PROPERTIES IN N-TYPE INSB FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films ep itaxially grown on GaAs substrates by metalorganic chemical vapor depo sition. The films show a giant magnetoresistance: e.g., at 240 K the r esistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 muOMEGA c m/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresista nce may be understood based on a two-layer model.