TEMPERATURE-DEPENDENCE OF ION-BEAM MIXING IN GAAS, ALAS, AND GAAS ALAS/GAAS/

Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has b een measured as a function of irradiation temperature with 1 MeV Kr io ns. The mixing parameter in the GaAs matrix was almost-equal-to 140 an gstrom5/eV at temperatures between 110 and 473 K, but dropped to almos t-equal-to 120 angstrom5/eV at 573 K. The value was smaller in the AlA s matrix, almost-equal-to 90 angstrom5/eV between 110 and 473 K, but i t increased to almost-equal-to 120 angstrom5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measur ed for comparison. At the deeper interface, AlAs on GaAs, and low temp erature, the mixing parameter was 440 angstrom5/eV, but only 250 angst rom5/eV at the other interface, GaAs on AlAs. Mixing at the lower inte r-face decreased at 573 K to 160 angstrom5/eV while it decreased at 47 3 K at the other interface to 110 angstrom5/eV. These results are inte rpreted on the basis of the influence of crystal structure on ion beam mixing.