EFFECTS OF A STRESS-FIELD ON BORON ION-IMPLANTATION DAMAGE IN SILICON

The effect of stress fields on the nucleation of defects from boron io n implantation into silicon has been examined. Two different processin g techniques were, used to create the stress field: formation of an ox ide-filled trench and formation of windows etched into nitride films. Interstitial dislocation loops created by the boron implantation were found to be preferentially oriented with respect to the stress field. A correlation between the force resulting from the stress field and th e orientation of the dislocation loops was found.