Sg. Kim et al., RAMAN-SCATTERING STUDY ON THE EFFECTS OF GA ION-IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING FOR ALSB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(4), 1993, pp. 2300-2305
Radiation damage and its recovery process of molecular-beam epitaxy gr
own AlSb implanted with Ga ions is studied using Raman scattering for
Ga ion fluences ranging from 1 x 10(13) to 5 x 10(14) cm-2 and for ann
ealing temperatures ranging from 300 to 600-degrees-C. With increasing
fluences the AlSb longitudinal optical (LO) phonon mode shifts to low
er frequency and exhibits an asymmetric broadening. Recovery of radiat
ion damages in the ion implanted AlSb is observed after annealing at a
s low as 300-degrees-C. On the other hand, after annealing at above 50
0-degrees-C, disordering of the crystalline structure due to the outdi
ffusion of Sb is observed. The damage states and the recovering behavi
ors are quantitatively estimated using the spatial correlation model o
n the LO mode.