RAMAN-SCATTERING STUDY ON THE EFFECTS OF GA ION-IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING FOR ALSB GROWN BY MOLECULAR-BEAM EPITAXY

Radiation damage and its recovery process of molecular-beam epitaxy gr own AlSb implanted with Ga ions is studied using Raman scattering for Ga ion fluences ranging from 1 x 10(13) to 5 x 10(14) cm-2 and for ann ealing temperatures ranging from 300 to 600-degrees-C. With increasing fluences the AlSb longitudinal optical (LO) phonon mode shifts to low er frequency and exhibits an asymmetric broadening. Recovery of radiat ion damages in the ion implanted AlSb is observed after annealing at a s low as 300-degrees-C. On the other hand, after annealing at above 50 0-degrees-C, disordering of the crystalline structure due to the outdi ffusion of Sb is observed. The damage states and the recovering behavi ors are quantitatively estimated using the spatial correlation model o n the LO mode.