DEPTH DISTRIBUTION AND THERMAL-STABILITY OF IMPLANTED HG IONS IN SILICON

50-400 keV Hg+ was implanted into silicon seven years ago. The depth d istribution and temperature effect of the implanted Hg+ were recently investigated by Rutherford backscattering of 2.1 MeV He-4(2+). The res ults show that the implanted Hg+ in silicon is still stable at room te mperature after seven years. After 1000-degrees-C annealing, the impla nted Hg ions disappeared. The depth distributions of implanted Hg+ in Si can be well described by the transport of ions in matter (TRIM'90). In addition, the values of mean projected range and range straggling obtained from the present measurements are compared with those Of TRIM '90 and the calculation procedure based on Biersack's angular diffusio n model.