MEASUREMENT OF INTRINSIC STRESSES DURING GROWTH OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTER-DEPOSITION

Authors
MENG WJ SELL JA EESLEY GL PERRY TA
Citation
Wj. Meng et al., MEASUREMENT OF INTRINSIC STRESSES DURING GROWTH OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTER-DEPOSITION, Journal of applied physics, 74(4), 1993, pp. 2411-2414
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
4
Year of publication
1993
Pages
2411 - 2414
Database
ISI
SICI code
0021-8979(1993)74:4<2411:MOISDG>2.0.ZU;2-D
Abstract
Real-time measurements of intrinsic stresses during growth of polycrys talline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature me asurements provide evidence of large intrinsic stresses during epitaxi al growth of AlN on Si(111) and insignificant stress relaxation during growth.