SURFACE SEGREGATION EFFECTS OF IN IN GAAS

Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cr oss-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during mol ecular-beam epitaxial growth of InAs monolayers between GaAs layers. T he InAs growth temperature at which In segregation is detectable depen ds on the characterization technique used; using PL it is above 420-de grees-C, but from TEM and SIMS it is 420 and 340-degrees-C, respective ly. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS dat a show that the total amount of In segregating and the extent of its d istribution both increase with InAs deposition temperature.