ENHANCED LUMINESCENCE DUE TO IMPACT IONIZATION IN PHOTODIODES

A simple mechanism explaining the enhanced luminescence of p-i-n struc tures and reach-though avalanche photodiodes approaching reverse-bias breakdown is proposed. The model presented predicts enhanced photon em ission based on calculations of the spatial dependence of the impact i onization events. Experimentally, an enhancement of a factor of 100 in the optical efficiency is observed in p-i-n silicon photodiodes when biased in the gain regime. A series of measurements made on commercial ly available photodiodes are presented. Theoretical predictions are co mpared with the experimental photonic output versus internal electric field and current.