Cm. Krowne et Pa. Blakey, SUBMILLIMETER-WAVE LOW-TEMPERATURE ADMITTANCE OF N-GAAS AND N-INP DIODE STRUCTURES, Journal of applied physics, 74(4), 1993, pp. 2633-2637
Numerical simulation results for n+nn+ GaAs and InP diode structures i
n the 1-5 THz frequency range are presented. Cryogenic temperatures fr
om 4 through about 77 K as well as some cases above liquid-nitrogen te
mperature are examined to obtain the two-terminal admittance. Earlier
work has suggested possible negative conductivity at or below 4.2 K, b
ut nothing consistent above 77 K. Implications of the Monte Carlo data
for generation of submillimeter waves at intermediate lattice tempera
tures between 4 and 60 K are discussed for GaAs. Furthermore, numerica
l results are obtained at elevated lattice temperatures (200 and 300 K
) to form a more complete view of transport in InP. The GaAs and InP r
esults strongly suggest negative conductance behavior will be found be
low 20 K.