SUBMILLIMETER-WAVE LOW-TEMPERATURE ADMITTANCE OF N-GAAS AND N-INP DIODE STRUCTURES

Citation
Cm. Krowne et Pa. Blakey, SUBMILLIMETER-WAVE LOW-TEMPERATURE ADMITTANCE OF N-GAAS AND N-INP DIODE STRUCTURES, Journal of applied physics, 74(4), 1993, pp. 2633-2637
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
4
Year of publication
1993
Pages
2633 - 2637
Database
ISI
SICI code
0021-8979(1993)74:4<2633:SLAONA>2.0.ZU;2-Y
Abstract
Numerical simulation results for n+nn+ GaAs and InP diode structures i n the 1-5 THz frequency range are presented. Cryogenic temperatures fr om 4 through about 77 K as well as some cases above liquid-nitrogen te mperature are examined to obtain the two-terminal admittance. Earlier work has suggested possible negative conductivity at or below 4.2 K, b ut nothing consistent above 77 K. Implications of the Monte Carlo data for generation of submillimeter waves at intermediate lattice tempera tures between 4 and 60 K are discussed for GaAs. Furthermore, numerica l results are obtained at elevated lattice temperatures (200 and 300 K ) to form a more complete view of transport in InP. The GaAs and InP r esults strongly suggest negative conductance behavior will be found be low 20 K.