LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON ON-AXIS (100) SI USING IONIZED SOURCE BEAM EPITAXY

The epitaxial growth of GaAs films on on-axis (100) Si was studied at growth temperatures in the range 160-280-degrees-C using ionized sourc e beam epitaxy. Single-crystal GaAs films could be grown at a temperat ure as low as 160-degrees-C with the acceleration of a partially ioniz ed As-source beam, whereas at the same temperature only amorphous film s were possible with neutral beams or with the ionized source beam wit h no acceleration. The use of an ionized As-source beam even without b eam acceleration greatly improved the surface flatness of the GaAs fil m, and suppressed the formation of antiphase domains. The acceleration of the ionized As beam further improved the surface quality of the fi lm.