HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES

Authors
LU XJ RHODES D PERLMAN BS
Citation
Xj. Lu et al., HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES, Journal of applied physics, 74(4), 1993, pp. 2908-2913
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
4
Year of publication
1993
Pages
2908 - 2913
Database
ISI
SICI code
0021-8979(1993)74:4<2908:HCEIRD>2.0.ZU;2-0
Abstract
The time-varying charge buildup in the quantum well region of a resona nt tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analys is of admittance shows a prominent influence from the capacitive effec t, due to the dynamic shifting of the resonant energy levels. The mode l developed is helpful for understanding the RTD's high-frequency beha vior and device applications.