It is shown that a combination of low-temperature photoluminescence an
d luminescence excitation spectroscopies together with appropriate mod
elization can provide the precise information needed for a thorough co
ntrol of interdiffusion in quantum well structures. A fit of observed
and calculated transition energies up to five energy levels, using the
interdiffusion length as a unique parameter, is considered. The poten
tiality of this procedure to fully characterize the interdiffusion pro
cess is illustrated by considering the examples of lightly and heavily
intermixed GaAs-AlGaAs multiquantum wells.