GLOBAL AND LOCAL STABILITY OF LATTICE-MISMATCHED SEMICONDUCTOR INTERFACES

Authors
BOGUSLAWSKI P FURDYNA JK
Citation
P. Boguslawski et Jk. Furdyna, GLOBAL AND LOCAL STABILITY OF LATTICE-MISMATCHED SEMICONDUCTOR INTERFACES, Semiconductor science and technology, 8(8), 1993, pp. 1507-1511
Citations number
29
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
8
Year of publication
1993
Pages
1507 - 1511
Database
ISI
SICI code
0268-1242(1993)8:8<1507:GALSOL>2.0.ZU;2-T
Abstract
We show that an ideally abrupt (001) interface between two lattice-mis matched semiconductor compounds (e.g. a ZnSe/CdSe interface In structu res grown on ZnSe substrates, or a GaAs/InAs interface grown on GaAs) is stable with respect to the formation of an interdiffused layer. On the other hand, the use of a substrate with a larger lattice constant (e.g. InP) strongly destabilizes the interface. The energetics of loca l reconstructions of the interface formed at the initial stages of the interdiffusion process are investigated.