PHOTOCURRENT AND ELECTROREFLECTANCE SPECTROSCOPY OF WANNIER-STARK LOCALIZATION IN INXGA1-XAS-GAAS SUPERLATTICES

Authors
GIBB K FORTIN E ROTH AP
Citation
K. Gibb et al., PHOTOCURRENT AND ELECTROREFLECTANCE SPECTROSCOPY OF WANNIER-STARK LOCALIZATION IN INXGA1-XAS-GAAS SUPERLATTICES, Semiconductor science and technology, 8(8), 1993, pp. 1648-1654
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
8
Year of publication
1993
Pages
1648 - 1654
Database
ISI
SICI code
0268-1242(1993)8:8<1648:PAESOW>2.0.ZU;2-H
Abstract
We have measured Wannier-Stark localization in InxGa1-xAs-GaAs superla ttices using photocurrent and electroreflectance spectroscopy at 4.5 K . Photocurrent spectra at finite bias show the formation of Wannier-St ark ladders, asymmetry in oscillator strengths between plus and minus index Stark ladders, as well as anticrossings between Stark ladders at weak fields. Electroreflectance spectra provide an increased sensitiv ity to the Stark ladders, revealing additional heavy-hole and light-ho le ladders not observed in the photocurrent spectra.