PHOTOLUMINESCENCE STUDIES IN STRAINED INAS INP QUANTUM-WELLS GROWN BYHYDRIDE VAPOR-PHASE EPITAXY/

Authors
DISSEIX P LEYMARIE J VASSON A VASSON AM BANVILLET H GIL E PIFFAULT N CADORET R
Citation
P. Disseix et al., PHOTOLUMINESCENCE STUDIES IN STRAINED INAS INP QUANTUM-WELLS GROWN BYHYDRIDE VAPOR-PHASE EPITAXY/, Semiconductor science and technology, 8(8), 1993, pp. 1666-1670
Citations number
29
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
8
Year of publication
1993
Pages
1666 - 1670
Database
ISI
SICI code
0268-1242(1993)8:8<1666:PSISII>2.0.ZU;2-3
Abstract
Strained InAs/InP single quantum wells grown by hydride vapour phase e pitaxy have been investigated by photoluminescence. The evolution of t he spectra when the temperature is varied above 5K is analysed in part icular. At temperatures larger than approximately 150 K, a signal is g enerally detected at an energy higher than that of the heavy exciton ( e1hh1) peak which is still observed. It is interpreted as being due to the recombination of conduction band electrons in the InP barriers wi th heavy holes in the InAs well (e(c)hh1). A value of 0.48 +/- 0.02 eV is determined for the strained valence band offset from the fit of a simple single-band model to both the e1hh1 and e(c)hh1 transition ener gies.